the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1998, 1999 mos field effect transistor pa1912 p-channel mos field effect transistor for switching data sheet document no. d13806ej3v0ds00 (3rd edition) date published may 2001 ns cp(k) printed in japan the mark ! ! ! ! shows major revised points. description the pa1912 is a switching device which can be driven directly by a 2.5-v power source. the pa1912 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features ? can be driven by a 2.5-v power source ? low on-state resistance r ds(on)1 = 50 m ? max. (v gs = ?4.5 v, i d = ?2.5 a) r ds(on)2 = 52 m ? max. (v gs = ?4.0 v, i d = ?2.5 a) r ds(on)3 = 70 m ? max. (v gs = ?2.5 v, i d = ?2.5 a) ordering information part number package pa1912te sc-95 (mini mold thin type) absolute maximum ratings (t a = 25c) drain to source voltage v dss ?12 v gate to source voltage v gss 10 v drain current (dc) i d(dc) 4.5 a drain current (pulse) note1 i d(pulse) 18 a total power dissipation p t1 0.2 w total power dissipation note2 p t2 2w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1 % 2. mounted on fr-4 board, t 5 sec. remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ? 0.06 2.8 ?.2 1.5 0.95 123 654 1.9 2.9 ?.2 0.32 +0.1 ? 0.05 0.95 0.65 +0.1 ? 0.15 1 , 2, 5, 6 : drain 3 : gate 4 : source equivalent circuit source body diode gate protection diode marking: td gate drain
data sheet d13806ej3v0ds 2 pa1912 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 12 v, v gs = 0 v ? 10 a gate leakage current i gss v gs = 10 v, v ds = 0 v 10 a gate to source cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1 ma ? 0.5 ? 0.90 ? 1.5 v forward transfer admittance | y fs |v ds = ? 10 v, i d = ? 2.5 a39.3s drain to source on-state resistance r ds(on)1 v gs = ? 4.5 v, i d = ? 2.5 a3950m ? r ds(on)2 v gs = ? 4.0 v, i d = ? 2.5 a4052m ? r ds(on)3 v gs = ? 2.5 v, i d = ? 2.5 a5370m ? input capacitance c iss v ds = ? 10 v 810 pf output capacitance c oss v gs = 0 v 241 pf reverse transfer capacitance c rss f = 1 mhz 122 pf turn-on delay time t d(on) v dd = ? 6 v 304 ns rise time t r i d = ? 2.5 a 532 ns turn-off delay time t d(off) v gs(on) = ? 4.0 v 406 ns fall time t f r g = 10 ? 796 ns total gate charge q g v dd = ? 10 v5.6nc gate to source charge q gs i d = ? 4.5 a2.2nc gate to drain charge q gd v gs = ? 4.0 v2.6nc diode forward voltage v f(s-d) i f = 4.5 a, v gs = 0 v0.86v reverse recovery time t rr i f = 4.5 a, v gs = 0 v1.1 s reverse recovery charge q rr di/dt = 10 a / s4.3 c pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % r g = 10 ? i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma test circuit 1 switching time test circuit 2 gate charge
data sheet d13806ej3v0ds 3 pa1912 typical charcteristics (t a = 25 c) 30 60 90 120 150 derating factor of forward bias safe operating area 100 80 60 40 20 0 dt - derating factor - % t a - ambient temperature - ?c v ds - drain to source voltage - v i d - drain current - a ? 100 ? 10 ? 1 ? 0.1 ? 1 ? 10 ? 100 forward bias safe operating area single pulse mounted on 250mm 2 x 35 m copper pad connected to drain electrode in 50mm x 50mm x 1.6mm fr-4 board. r ds (on) limited (v gs = ? 4.5 v) i d (pulse) i d (dc) p w = 100 ms p w = 5 s p w = 10 ms p w = 1 ms drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 20 ? 16 ? 12 ? 8 ? 4 0 v gs = ? 4.5 v v gs = ? 4.0 v v gs = ? 2.5 v forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a ? 100 ? 10 ? 1 ? 0.1 ? 0.01 ? 0.001 ? 0.0001 ? 0.00001 0 ? 1.0 ? 2.0 ? 3.0 v ds = ? 10 v t a = 125 ? c 75 ? c t a = 25 ? c ? 25 ? c gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate to source cut-off voltage - v v ds = ? 10 v i d = ? 1 ma ? 50 0 50 100 150 ? 0.5 ? 1.0 ? 1.5 forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s v ds = ? 10 v ? 0.01 ? 0.1 ? 1 ? 10 ? 100 100 10 1 0.1 0.01 t a = ? 25 ? c 25 ? c 75 ? c 125 ? c !
data sheet d13806ej3v0ds 4 pa1912 drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? ? 0.01 ? 0.1 ? 1 ? 10 ? 100 120 100 80 60 40 v gs = ? 2.5 v t a =125 c t a = 75 c t a = 25 c t a = ? 25 c drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? ? 0.01 ? 0.1 ? 1 ? 10 100 60 50 40 30 v gs = ? 4.0 v t a =125 c t a = 75 c t a = 25 c t a = ? 25 c drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? ? 0.01 ? 0.1 ? 1 ? 10 ? 100 60 50 40 30 v gs = ? 4.5 v t a =125 c t a = 75 c t a = 25 c t a = ? 25 c drain to source on-state resistance vs. channel temperature t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m ? i d = ? 2.5 a ? 50 0 50 100 150 70 60 50 40 30 v gs = ? 2.5 v v gs = ? 4.0 v v gs = ? 4.5 v drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? ? 2 ? 4 ? 6 ? 8 ? 10 100 80 60 40 20 0 i d = ? 2.5 a ? 0.1 ? 1.0 10000 1000 100 10 ? 10 ? 100 capacitance vs. drain to source voltage c iss , c oss , c rss - capacitance - pf v ds - drain to source voltage - v c oss c iss c rss f = 1 mhz v gs = 0 v
data sheet d13806ej3v0ds 5 pa1912 switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 ? 0.1 ? 1 ? 10 100 1000 10000 v dd = ? 6 v v gs(on) = ? 4 . 0 v r g = 10 ? t d(on) t d(off) t f t r source to drain diode forward voltage v f(s-d) - source to drain voltage - v i f(s-d) - diode forward current - a 0.4 0.6 0.8 1.0 1.2 100 10 1 0.1 0.01 dynamic input characteristics q g - total gate charge - nc v ds - drain to source voltage - v 246810 ? 8 ? 6 ? 4 ? 2 0 i d = ? 4.5 a v dd = ? 10 v ? 6 v transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - c/w 1000 100 10 1 1000 100 10 1 0.1 0.01 0.001 single pulse without board mounted on 250mm 2 35 m copper pad connected to drain electrode in 50mm 50mm 1.6mm fr-4 board !
data sheet d13806ej3v0ds 6 pa1912 [memo]
data sheet d13806ej3v0ds 7 pa1912 [memo]
pa1912 m8e 00. 4 the information in this document is current as of may, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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